Variable energy positron beam characterization of defects in as-grown and annealed low temperature grown GaAs

Journal Article · Wed Dec 01 00:00:00 EST 1993 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/BF02649986· OSTI ID:535211

Umlor, M T; Keeble, D J ^[1]; Cooke, P W ^[2]

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1. Michigan Technological Univ., Houghton, MI (United States)
2. GEO-Centers, Inc., Fort Monmouth, NJ (United States); and others

Variable energy positron annihilation measurements on as-grown and annealed GaAs grown by molecular beam epitaxy at temperatures between 230 and 350{degrees}C have been performed. Samples were subjected to either isochronal anneals to temperatures in the range 300 to 600{degrees}C or rapid thermal anneals to 700,800, and 900{degrees}C. A significant increase in the S-parameter was observed for all samples annealed to temperatures greater than 400{degrees}C. The positron annihilation characteristics of the defect produced upon annealing are consistent with divacancies or larger vacancy clusters. The concentration of as-grown and anneal generated defects is found to decrease with increasing growth temperature. 14 refs., 4 figs.

• Sponsoring Organization: USDOE
• OSTI ID: 535211
• Journal Information: Journal of Electronic Materials, Vol. 22, Issue 12; Other Information: PBD: Dec 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
CRYSTAL DEFECTS
ANNEALING
MOLECULAR BEAM EPITAXY
VACANCIES
TEMPERATURE DEPENDENCE