{ital In situ} monitoring during pulsed laser deposition of complex oxides using reflection high energy electron diffraction under high oxygen pressure

Journal Article · Tue Apr 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118687· OSTI ID:534423

Rijnders, G J; Koster, G; Blank, D H; Rogalla, H ^[1]

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1. Department of Applied Physics, University of Twente, 7500 AE Enschede (the Netherlands)

A suitable {ital in situ} monitoring technique for growth of thin films is reflection high energy electron diffraction (RHEED). Deposition techniques, like pulsed laser deposition (PLD) and sputter deposition, used for fabrication of complex oxide thin films use relatively high oxygen pressures (up to 100 Pa) and are, therefore, not compatible with ultrahigh vacuum RHEED equipment. We have developed a RHEED system which can be used for growth monitoring during the deposition of complex oxides at standard PLD conditions. We are able to increase the deposition pressure up to 50 Pa using a two-stage differential pumping system. Clear RHEED patterns are observable at these high pressures. The applicability of this system is demonstrated with the study of homoepitaxial growth of SrTiO{sub 3} as well as the heteroepitaxial growth of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} on SrTiO{sub 3}. Intensity oscillations of the RHEED reflections, indicating two-dimensional growth, are observed up to several tens of nanometers film thickness in both cases. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 534423
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
BARIUM OXIDES
COPPER OXIDES
DEPOSITION
ELECTRON DIFFRACTION
HIGH-TC SUPERCONDUCTORS
PRESSURE DEPENDENCE
THIN FILMS
VAPOR DEPOSITED COATINGS
VAPOR PHASE EPITAXY
YTTRIUM OXIDES