Surface Raman spectra of a biased and buried ultrathin copper phthalocyanine layer

Journal Article · Tue Jan 01 00:00:00 EST 1991 · Langmuir; (United States)

DOI:https://doi.org/10.1021/la00049a002· OSTI ID:5326828

Hipps, K W; Dowdy, J; Hoagland, J J ^[1]

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1. Washington State Univ., Pullman (USA)

Raman spectra of Al-AlO{sub x}-CuPc (1 nm)-M devices, where M = Ag or Pb, are reported. The first Raman spectrum of a material buried in a working (biased) tunnel diode without Ag surface enhancement or substrate roughening is reported. Comparison of the Raman spectra resulting from biased devices with inelastic electron tunneling spectra proves that the anomalous features of the CuPc tunneling spectrum are not due to electrochemical changes inside the device.

• OSTI ID: 5326828
• Journal Information: Langmuir; (United States), Vol. 7:1; ISSN 0743-7463
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
COPPER COMPLEXES
RAMAN SPECTRA
PHTHALOCYANINES
ALUMINIUM OXIDES
DATA ANALYSIS
EXPERIMENTAL DATA
MICROELECTRONICS
TUNNEL DIODES
ALUMINIUM COMPOUNDS
CHALCOGENIDES
COMPLEXES
DATA
DYES
HETEROCYCLIC COMPOUNDS
INFORMATION
NUMERICAL DATA
ORGANIC COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTRA
TRANSITION ELEMENT COMPLEXES
400102* - Chemical & Spectral Procedures