Thin films of gallium arsenide on low-cost substrates. Quarterly technical progress report No. 5 and topical report No. 1, October 2, 1977-December 31, 1977

Technical Report · Sun Jan 01 04:00:00 EST 1978

DOI:https://doi.org/10.2172/5324270· OSTI ID:5324270

Ruth, R. P.; Dapkus, P. D.; Dupuis, R. D.; Johnson, R. E.; Manasevit, H. M.; Moudy, L. A.; Yang, J. J.; Yingling, R. D.

The metalorganic chemical vapor deposition (MO-CVD) technique has been applied to the growth of thin films of GaAs and GaAlAs on inexpensive polycrystalline or amorphous substrate materials (primarily glasses and metals) for use in fabrication of large-area low-cost photovoltaic device structures. Trimethylgallium (TMG), arsine (AsH/sub 3/), and trimethylaluminum (TMAl) are mixed in appropriate concentrations at room temperature in the gaseous state and pyrolyzed at the substrate, which is heated in a vertical reactor chamber to temperatures of 725 to 750/sup 0/C, to produce the desired film composition and properties. The substrates used during the quarter included composite structure of sputtered Mo films on various glasses, composites of CVD (GeH/sub 4/ pyrolysis) Ge films of these same glasses, large-grained annealed bulk Mo sheet, large-grained bulk polycrystalling GaAs, and one grade of high-purity high-density graphite. The glasses used were Corning Codes 0317, 7059, and 1723, with most of the composites involving the 0317 type. Preliminary results with graphite substrates were not encouraging, but the available substrates used were not of adequate purity or surface quality. Results are discussed. (WHK)

• Research Organization: Rockwell International Corp., Anaheim, CA (USA)
• OSTI ID: 5324270
• Report Number(s): SAN-1202-78/1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARBON
CARRIER DENSITY
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COMPOSITE MATERIALS
CRYSTAL DOPING
CRYSTAL STRUCTURE
CURRENTS
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRIC CURRENTS
ELEMENTS
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
GLASS
GRAIN SIZE
GRAPHITE
JUNCTIONS
LEAKAGE CURRENT
MATERIALS
METALS
MICROSTRUCTURE
MOLYBDENUM
NONMETALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
REFRACTORY METALS
RESEARCH PROGRAMS
SEMICONDUCTOR JUNCTIONS
SIZE
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES
SURFACE COATING
TRANSITION ELEMENTS