Case history: Wafer level failure analysis of functional ICs with elevated I sub DDQ caused by resistive gate oxide shorts

Conference · Tue Jan 01 00:00:00 EST 1991

OSTI ID:5322784

Barton, D L; Horry, M L

This case history details the failure analysis process used to locate and identify the root cause of elevated currents on functional very large scale integration (VLSI) devices. The process stresses the use of non-destructive tools to correctly characterize the problem and recommend a solution. It was found that while emission microscopy can easily locate areas where an oxide has shorted, it is not well suited for identifying precursers to early breakdown. Tunneling current microscopy was found to have the capability to identify weak areas in oxides without altering the cause of the weakness. 17 refs., 8 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5322784
• Report Number(s): SAND-91-0789C; CONF-911115-1; ON: DE91017457
• Resource Relation: Conference: 17. international symposium for testing and failure analysis, Los Angeles, CA (United States), 11-15 Nov 1991
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ELECTRICAL FAULTS
DETECTION
INTEGRATED CIRCUITS
TRANSMISSION ELECTRON MICROSCOPY
CURRENT DENSITY
ELECTRIC CONDUCTIVITY
FAILURE MODE ANALYSIS
NONDESTRUCTIVE ANALYSIS
OXIDES
CHALCOGENIDES
CHEMICAL ANALYSIS
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELECTRONIC CIRCUITS
MICROELECTRONIC CIRCUITS
MICROSCOPY
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SYSTEM FAILURE ANALYSIS
SYSTEMS ANALYSIS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)