Experimental and theoretical investigations of the quality factor for n+p silicon solar cells
Many N/sup +/P silicon cells made with silicon from different growth techniques have current-voltage relations of the form: I.I/sub 0/ (exp(qV/AkT) - 1) where the quality factor A is non-integral, is >1 and shows a temperature dependence. The dark forward characteristics of such cells have been measured over a range of temperature and the behavior of the factor A derived from them. A new model is presented on the assumption of non-uniform distributions of recombination levels in the junction depletion layer. This model shows good agreement with experimental data. The cells investigated had evaporated top metallization and so the junction contamination giving the recombination levels is likely to be a result of junction diffusion and is not specific to the metallization processing. The model needs further development and evaluation in order to apply it to the illuminated cell behavior and also to include any effects of distributed sheet resistance in the N/sup +/ layer. 17 refs.
- OSTI ID:
- 5321604
- Report Number(s):
- CONF-800719-
- Journal Information:
- Proc. Soc. Photo-Opt. Instrum. Eng.; (United States), Vol. 248; Conference: International symposium of the Society of Photo-Optical Instrumentation Engineers, San Diego, CA, USA, 28 Jul 1980
- Country of Publication:
- United States
- Language:
- English
Similar Records
Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell
Improved modeling of grain boundary recombination in bulk and {ital p}-{ital n} junction regions of polycrystalline silicon solar cells