Intracavity nearly degenerate four-wave mixing in a (GaAl)As semiconductor laser

Journal Article · Tue Oct 15 04:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96424· OSTI ID:5319017

Nakajima, H; Frey, R

Intracavity nearly degenerate four-wave mixing has been demonstrated by injecting a low intensity probe beam of frequency ..omega..-delta..omega.. inside a (GaAl)As semiconductor laser operating above threshold at the pump frequency ..omega... Conjugated reflectivities as high as 5000 together with a 25% energy conversion efficiency are reported with only a few milliwatt pump power. Additional peaks related to the ac stark effect have been observed at a detuning which depended on the pump power. This process could be useful for the study of instabilities occurring in lasers as well as for optical amplification in laser diodes.

• Research Organization: Ecole Nationale Superieure des Telecommunications, Electronics and Physics Department, 46, rue Barrault, 75634 Paris Cedex 13, France
• OSTI ID: 5319017
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CONVERSION
DATA
EFFICIENCY
ENERGY CONVERSION
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HARMONICS
INFORMATION
INSTABILITY
LASERS
MIXING
NONLINEAR OPTICS
NUMERICAL DATA
OPERATION
OPTICAL PROPERTIES
OPTICS
OSCILLATIONS
PHYSICAL PROPERTIES
PNICTIDES
PUMPING
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE PROPERTIES