Electron erosion: a proposed failure mechanism for high-voltage capacitors
Continued research effort on the perfluorocarbon high energy density capacitor technology has been directed toward a better understanding of the failure mechanism or mechanisms inherent in this technology. A number of varied experiments have been conducted during the past year, all designed to advance this understanding. The results of this experimental effort suggest that a single failure influence is involved. It is hypothesized that this influence is erosion of the dielectric material by electrons stripped off the electrode material and accelerated across the gap between electrodes and dielectric by the fields present. For example, it has been observed that the thickness of the liquid layer between electrodes and dielectric, as controlled by winding tightness, has a dramatic effect on discharge life. A thick layer of liquid results in a large increase in discharge life. It is proposed that the thicker layer acts as a more effective electron screen between the electrodes and dielectric hence reducing the rate of erosion and attendant wearout. Other experiments have supported this hypothesis without anomaly. The model and present varied test results in support of this hypothesis are described.
- Research Organization:
- Sandia National Labs., Livermore, CA (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5313404
- Report Number(s):
- SAND-81-1817C; CONF-820414-1; ON: DE82005768
- Resource Relation:
- Conference: 2. annual capacitor and resistor technology symposium, New Orleans, LA, USA, 6 Apr 1982
- Country of Publication:
- United States
- Language:
- English
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