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Control of microstructure and properties of copper films using ion-assisted deposition

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.575339· OSTI ID:5312498
The effect of argon ion bombardment on the structure and properties of thick copper films was studied. Primary deposition variables were ion flux, ion energy, substrate temperature, and substrate type. The effects of ion bombardment are profoundly different at high energy (600 eV) as opposed to low energy (62 eV). Trends in crystallographic texture, microhardness, crystallite size, and resistivity are significantly different at different ion energies on all substrates examined. At high energy, the substrate dependence of properties is small while a large dependence is seen at lower energy. This work demonstrates the independence of ion energy and ion flux as control parameters in property modification using ion-assisted deposition processes.
Research Organization:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
OSTI ID:
5312498
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 6:3; ISSN JVTAD
Country of Publication:
United States
Language:
English