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Title: Depth of origin of sputtered atoms

Conference ·
OSTI ID:5312461

The depth of origin of sputtered atoms is an important quantity in surface physics. The importance is best observed by examining the literature on computer simulations and theoretical calculations. It is hard to find experimental measurements of the depth of origin of sputtered atoms, which is probably due to the difficulty of such experiments. A good determination of the depth of origin should be done on a well characterized system and without damaging it. The results reported here are obtained from 1-2 monolayers of Cu on a Ru(0001) single crystal surface. The first 2 monolayers of Cu evaporated onto Ru(0001) is known to exhibit a layer by layer growth. The sputtering is studied in the Surface Analysis by Resonance Ionization of Sputtered Atoms(SARISA) apparatus, where it is possible to do the determination before the overlayer is damaged by the ion beam. One monolayer of Cu on Ru is found to give a ratio of 3.2 between Cu and Ru in the sputtered flux for 4 keV normal incidence Ar ions. 3 refs., 2 figs., 1 tab.

Research Organization:
Argonne National Lab., IL (USA); Pittsburgh Univ., PA (USA). Surface Science Center
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
5312461
Report Number(s):
CONF-8708129-2; ON: DE88005929
Resource Relation:
Conference: NATO-ASI conference on materials modification by high-fluence ion beams, Viana do Castelo, Portugal, 24 Aug 1987
Country of Publication:
United States
Language:
English