Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Intensity fluctuation in semiconductor lasers coupled to external cavity

Journal Article · · IEEE J. Quant. Electron.; (United States)

Broad peaks are observed in the intensity noise spectrum for external cavity AlGaAs lasers. Oscillating longitudinal mode spectrum measured with a high resolution Fabry-Perot interferometer indicates that the intensity noise peaks result from the lasing of several closely spaced external cavity modes. A new mechanism is proposed to explain the observed noise spectrum; the intensity fluctuation is induced by modulation of the dielectric constant in the semiconductor cavity due to the beating of the electric fields for lasing modes. Qualitative agreements between the theory and experiments are obtained.

OSTI ID:
5310397
Journal Information:
IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-21:1; ISSN IEJQA
Country of Publication:
United States
Language:
English

Similar Records

Correlation between intensity noise and longitudinal modes of a semiconductor laser coupled to an external cavity
Journal Article · Thu Feb 28 23:00:00 EST 1985 · J. Appl. Phys.; (United States) · OSTI ID:6116771

Measurements of intensity fluctuations of an InGaAsP external cavity laser
Journal Article · Wed Feb 29 23:00:00 EST 1984 · Appl. Phys. Lett.; (United States) · OSTI ID:5220592

Semiconductor interferometric laser
Journal Article · Thu Jul 15 00:00:00 EDT 1982 · Appl. Phys. Lett.; (United States) · OSTI ID:5339990