Thermally induced flux motion in Nb thin films and the elementary pinning force

Thesis/Dissertation · Fri Jan 01 04:00:00 EST 1988

OSTI ID:5305081

Goldstein, M J

The thermally induced flux motion and the elemental pinning force, fp, for Nb thin films (1000-5000A) were measured for applied magnetic fields ranging from 0.3 to 7.5G, and temperatures from 4.22 to 5.72 K. The magnitude of f{sub p} (H,d,T) ranged from 10{sup {minus}12} to 10{sup {minus}11} N/m which is approximately 5 orders of magnitude smaller than Lorentz force depinning measurements made on Nb for the high field regime (flux line lattice), as well as the low field regime (isolated essentially non-interacting fluxoids). Some of these results are similar to the works of Huebener, et al, who first found a large discrepancy between the transport current method (J {times} B) and the thermal method, S{del}T, when calculating the pinning force on a flux line lattice structure. A model was proposed to explain the discrepancy in terms of an electron-scattering effect at or near the grain boundaries and extending into the grains which produces a channeling effect. The data exhibited a magnetic field threshold, below which there is no flux motion for the temperature range studied. The value of the minimum required applied field necessary for flux motion increases with increasing thickness.

• Research Organization: Florida Agricultural and Mechanical Univ., Tallahassee, FL (USA)
• OSTI ID: 5305081
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
CRYSTAL STRUCTURE
ELEMENTS
FILMS
GRAIN BOUNDARIES
MAGNETIC FLUX
METALS
MICROSTRUCTURE
MOTION
NIOBIUM
THIN FILMS
TRANSITION ELEMENTS
VERY LOW TEMPERATURE