Anomalous Hall effect in thin films of Pr{sub 0.5}Sr{sub 0.5}MnO{sub 3}

Journal Article · Sun Jun 01 04:00:00 EDT 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.55.R14721· OSTI ID:530184

Wagner, P; Mazilu, D; Trappeniers, L; Moshchalkov, V V; Bruynseraede, Y ^[1]

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1. Laboratorium voor Vaste-Stoffysica en Magnetisme, Katholieke Universiteit Leuven, Celestijnenlaan 200 D, 3001 Leuven (Belgium)

We report on the type and density of charge carriers obtained from Hall-effect measurements in the three different magnetic phases of Pr{sub 0.5}Sr{sub 0.5}MnO{sub 3} . The field dependence of the Hall resistivity has two contributions of opposite sign: one is related to skew scattering and dominates in low magnetic fields; the other one is due to the Lorentz-force contribution which prevails at higher fields. This second contribution corresponds to a temperature-independent carrier density in the order of 0.8 holes per chemical unit cell. The skew-scattering contribution is related to the susceptibility of the material and is maximum at the transition temperature from the ferro- to the antiferromagnetic state. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 530184
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 22 Vol. 55; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER DENSITY
CHARGE CARRIERS
FERROMAGNETIC MATERIALS
HALL EFFECT
MAGNETIC SUSCEPTIBILITY
MANGANESE OXIDES
PRASEODYMIUM COMPOUNDS
PRASEODYMIUM OXIDES
STRONTIUM COMPOUNDS
STRONTIUM OXIDES
THIN FILMS