Heterostructures in GaInP grown using a change in V/III ratio

Journal Article · Sun Jun 01 04:00:00 EDT 1997 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.365387· OSTI ID:530013

Chun, Y S; Murata, H; Lee, S H; Ho, I H; Hsu, T C; Stringfellow, G B ^[1]; Inglefield, C E; DeLong, M C; Taylor, P C ^[2]; Kim, J H; Seong, T ^[3]

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1. Departments of Materials Science and Engineering and Electrical Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)
2. Department of Physics, University of Utah, Salt Lake City, Utah 84112 (United States)
3. Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-303 (Korea)

A natural monolayer {l_brace}111{r_brace} superlattice (the CuPt ordered structure) is formed spontaneously during organometallic vapor phase epitaxial (OMVPE) growth of Ga{sub 0.52}In{sub 0.48}P. The extent of this ordering process is found to be a strong function of the input partial pressure of the phosphorus precursor during growth due to the effect of this parameter on the surface reconstruction and step structure. Thus, heterostructures can be produced by simply changing the flow rate of the P precursor during growth. It is found, by examination of transmission electron microscope (TEM) and atomic force microscope (AFM) images, and the photoluminescence (PL) and PL excitation (PLE) spectra, that order/disorder (O/D) (really less ordered on more ordered) heterostructures formed by decreasing the partial pressure of the P precursor during the OMVPE growth cycle at a temperature of 620{degree}C are graded over several thousands of {Angstrom} when PH{sub 3} is the precursor. The ordered structure from the lower layer persists into the upper layer. Similarly, D/O structures produced by increasing the PH{sub 3} flow rate yield PL spectra also indicative of a graded composition at the heterostructure. The grading is not reduced by a 1 h interruption in the growth cycle at the interface. Similar heterostructures produced at 670{degree}C using tertiarybutylphosphine (TBP) as the P precursor show a totally different behavior. Abrupt D/O and O/D heterostructures can be produced by abruptly changing the TBP flow rate during the growth cycle. PL and PLE studies show distinct peaks closely corresponding to those observed for the corresponding single layers. TEM dark field images also indicate that the interfaces in both for D/O and O/D heterostructures are abrupt. The cause of the difference in behavior for TBP and PH{sub 3} is not clear. It may be related to the difference in temperature. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 530013
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 81; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EXCITONS
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
PARTIAL PRESSURE
PHOTOLUMINESCENCE
PRECURSOR
SUPERLATTICES
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY