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U.S. Department of Energy
Office of Scientific and Technical Information

Method for producing multi-layer, thin-film, flexible silicon alloy photovoltaic cells

Patent ·
OSTI ID:5295861
The method is described for producing a semiconductor silicon alloy substrate for a photovoltaic cell, comprising the steps of: providing a ribbon of the silicon alloy in a molten state, passing the molten silicon alloy ribbon between a first pair of opposed rollers in a first rolling station, cooling the first pair of rollers for rapidly cooling the molten ribbon to its semi-solidus condition, then passing the ribbon between other pairs of opposed rollers in other rolling stations, keeping the ribbon temperature in the range from 740/sup 0/C to 1130/sup 0/C in the other rolling stations for promoting crystal growth in the ribbon while being rolled, suddenly quenching the hot rolled ribbon for stopping further crystal growth.
Assignee:
NOV; EDB-86-163674; NOV-85-020272
Patent Number(s):
US 4604791
OSTI ID:
5295861
Country of Publication:
United States
Language:
English