MOS flat-band capacitance method at low temperatures
- Pennsylvania State Univ., University Park, PA (USA). Dept. of Electrical Engineering
The expression C/sub FB/ = C/sub ox/ x ({element of}/sub si//L/sub D/)/(C/sub ox/ + ({Epsilon}/sub si//L/sub D/)) (where L/sub D/ is the Debye length), commonly used for the flat-band capacitance of the MOS structure, is invalid in the temperature range below 100 {Kappa}. Consequently, significant error may be encountered when the flat-band capacitance method is used to extract the flat-band voltage V/sub FB/, which is of considerable interest for both the modeling and characterization of MOS devices. To extend this method to low-temperature CMOS applications one has to use a more general model that can be obtained by applying Fermi-Dirac statistics and taking into account the impurity freezeout effect. The authors show that when the temperature dependence of V/sub FB/ is extracted using this approach, the experimental data for n/sup +/ polysilicon gate MOS capacitors are in a good agreement with a simple model.
- OSTI ID:
- 5295535
- Journal Information:
- IEEE (Institute of Electrical and Electronics Engineers) Transactions on Electron Devices; (USA), Journal Name: IEEE (Institute of Electrical and Electronics Engineers) Transactions on Electron Devices; (USA) Vol. 36:8; ISSN 0018-9383; ISSN IETDA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
250400 -- Energy Storage-- Capacitor Banks
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
426001* -- Engineering-- Superconducting Devices & Circuits-- (1990-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITANCE
CAPACITIVE ENERGY STORAGE EQUIPMENT
CAPACITORS
DATA
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
EXPERIMENTAL DATA
FERMI STATISTICS
INFORMATION
LOW TEMPERATURE
MOS TRANSISTORS
NUMERICAL DATA
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
TRANSISTORS