Basic mechanisms of radiation effects on electronic materials and devices
Many defense and nuclear reactor systems require complementary metal-oxide semiconductor integrated circuits that are tolerant to high levels of radiation. This radiation can result from space, hostile environments or nuclear reactor and accelerator beam environments. In addition, many techniques used to fabricate today's complex very-large-scale integration circuits expose the circuits to ionizing radiation during the process sequence. Whatever its origin, radiation can cause significant damage to integrated-circuit materials. This damage can lead to circuit performance degradation, logic upset, and even catastrophic circuit failure. This paper provides a brief overview of the basic mechanisms for radiation damage to silicon-based integrated circuits. Primary emphasis is on the effects of total-dose ionizing radiation on metal-oxide-semiconductor (MOS) structures.
- OSTI ID:
- 5288435
- Report Number(s):
- CONF-890604--
- Journal Information:
- Transactions of the American Nuclear Society; (USA), Journal Name: Transactions of the American Nuclear Society; (USA) Vol. 59; ISSN TANSA; ISSN 0003-018X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CURRENTS
DOSE-RESPONSE RELATIONSHIPS
DOSES
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
INTEGRATED CIRCUITS
IONIZING RADIATIONS
IRRADIATION
MATERIALS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
NUCLEAR FACILITIES
NUCLEAR POWER PLANTS
NUCLEAR WEAPONS
PHOTOCURRENTS
PHYSICAL RADIATION EFFECTS
POWER PLANTS
RADIATION DOSES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
THERMAL POWER PLANTS
TRANSISTORS
WEAPONS