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Title: Vacuum deposited polycrystalline silicon films for solar cell applications. Quarterly report, September 15-December 31, 1979

Technical Report ·
DOI:https://doi.org/10.2172/5288114· OSTI ID:5288114

Polycrystalline silicon films 14-22 ..mu..m thick and with average grain diameters of 20-40 ..mu..m were deposited by vacuum deposition onto both ceramic and sapphire substrates which were previously coated with a thin (1-2 ..mu..m) TiB/sub 2/ conducting layer. The large grains are the result of an interaction in the initial growth stages between silicon and TiB/sub 2/. SIMS studies of B/Ti/Al/sub 2/O/sub 3/, B/Al/sub 2/O/sub 3/, and Ti/Al/sub 2/O/sub 3/, interactions are reported as part of a continuing investigation of TiB/sub 2/ formation and silicon interactions on the TiB/sub 2/ surface. The increase in grain size has led to an improvement in the open-circuit voltage V/sub oc/, but not to an increase in the short-circuit current J/sub sc/. Capacitance-voltage measurements give results characteristic of an abrupt junction and a build-in voltage V/sub D/ consistent with the measured doping levels. A simple method for measuring the minority carrier diffusion length in the base region L/sub n/ is described. The measurements indicate that there is little change in L/sub n/ between large (20-40 ..mu..m) and small (approx. 5 ..mu..m) grained samples.

Research Organization:
Johns Hopkins Univ., Laurel, MD (USA). Applied Physics Lab.
DOE Contract Number:
AC02-77CH00178
OSTI ID:
5288114
Report Number(s):
SERI/PR-8278-1-T1
Country of Publication:
United States
Language:
English