Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Study of the defect structure of ''pure'' and doped nonstoichiometric CeO/sub 2/. Final report, January 1, 1965--May 31, 1977

Technical Report ·
DOI:https://doi.org/10.2172/5283018· OSTI ID:5283018
The defect structure and transport properties of defects in nonstoichiometric oxides was studied based on their electrical and thermodynamic behavior. Similar studies were also made on doped-nonstoichiometric oxides to determine the effect of the ionic radii, valence and concentration of the dopant cation on the nonstoichiometric defect structure and the transport properties of these defects. The thermodynamic and electrical property study on ''pure'' and doped-nonstoichiometric CeO/sub 2//sub -x/ is reviewed. The combined study of the electrical conductivity, ionic transference, and thermodynamic measurements initiated on CaO-doped CeO/sub 2/ as a function of temperature, oxygen pressure and CaO content is discussed. The results of similar measurements on CeO/sub 2/ doped with other oxides (e.g., ThO/sub 2/, Ta/sub 2/O/sub 5/, etc.) which have cations with different valences and ionic radii are also discussed. The primary objective of these studies was to determine the effect of ionic radii, valence and concentration of the dopant cation on (1) the nonstoichiometric behavior, (2) the thermodynamic quantities ..delta..antiH/sub O/sub 2// and ..delta..antiS/sub O/sub 2//, (3) the nonstoichiometric defect structure, (4) the electronic and ionic conductivities, and (5) the mobility of electrons and oxygen vacancies in doped CeO/sub 2//sub -x/.
Research Organization:
Marquette Univ., Milwaukee, Wis. (USA). Coll. of Engineering
DOE Contract Number:
EY-76-S-02-1441
OSTI ID:
5283018
Report Number(s):
COO-1441-28
Country of Publication:
United States
Language:
English