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Stabilization and luminescent properties of GaP/GaAs/sub 0. 4/P/sub 0. 6/ strained-layer superlattice electrodes

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.95962· OSTI ID:5281733
Photoelectrochemical cells based on n-GaP/n-GaAs/sub 0.4/P/sub 0.6/ strained-layer superlattice (SLS) electrodes have been stabilized against photocorrosion in an aqueous (di) telluride electrolyte, and show monochromatic optical to electrical energy conversion efficiencies of a few percent. The near-band-gap photoluminescence (PL) of the SLS electrodes exhibits field-induced quenching in rough accord with a dead-layer model. Electroluminescence (EL) is observed when the SLS's are used as cathodes in a formamide/Na/sub 2/S/sub 2/O/sub 8/ electrolyte. The EL and PL spectral distributions are similar.
Research Organization:
Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5281733
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:8; ISSN APPLA
Country of Publication:
United States
Language:
English