Plasma-assisted formation of low defect density SiC{endash}SiO{sub 2} interfaces
- Institut fur Halbleitnertechnik, RWTH-Aachen, Aachen D-52074 (Germany)
- Departments of Physics, Materials Science and Engineering and Electrical and Computer Engineering, and Chemistry, North Carolina State University, Raleigh, North Carolina 27695-8202 (United States)
The initial stages of SiC{endash}SiO{sub 2} interface formation by low temperature (300{degree}C) remote plasma assisted oxidation (RPAO) on flat and vicinal 6H SiC(0001) wafers with Si faces have been studied by on-line Auger electron spectroscopy (AES). Changes in AES spectral features associated with Si{endash}C and Si{endash}O bonds are readily evident as oxidation progresses; however, there are no detectable AES features that can be attributed to C{endash}O bonds. Initial oxidation rates as determined from AES data are greater for vicinal wafers than for flat wafers paralleling results for RPAO oxidation of Si. Devices fabricated on vicinal SiC wafers require an 1150{degree}C anneal in an H{sub 2} containing ambient to reduce defect densities from the 10{sup 13} to 10{sup 11}cm{sup {minus}2} range, consistent with termination of C atom step edge dangling bonds by H atoms. Devices prepared by thermal oxidation also require a 1150{degree}C anneal in H{sub 2} even though silicon oxycarbide regions with C{endash}O bonds are formed in a transition region at the SiC{endash}SiO{sub 2} interfaces. {copyright} {ital 1997 American Vacuum Society.}
- OSTI ID:
- 528018
- Report Number(s):
- CONF-970130-; ISSN 0734-211X; TRN: 9715M0087
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 15, Issue 4; Conference: 24. conference on the physics and chemistry of semiconductor interfaces, Research Triangle Park, NC (United States), 12-15 Jan 1997; Other Information: PBD: Jul 1997
- Country of Publication:
- United States
- Language:
- English
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