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Anomalous enhancement of the electron dephasing rate from magnetoresistance data in Bi sub 2 Sr sub 2 CuO sub 6

Journal Article · · Physical Review Letters; (United States)
; ;  [1]; ;  [2]
  1. Joseph Henry Laboratories of Physics, Princeton University, Princeton, NJ (USA)
  2. Bell Communications Research, 331 Newman Springs Road, Redbank, NJ (USA)
The low-temperature magnetoresistance (MR) in Bi{sub 2}Sr{sub 2}CuO{sub 6} is highly anisotropic. By fitting the orbital MR with the weak-localization expression, we derive a carrier dephasing rate 1/{tau}{sub {phi}} that varies as {ital T}{sup {minus}1/3}. This implies that the energy levels are greatly broadened at low temperatures. Both the energy scale derived from 1/{tau}{sub {phi}} vs {ital T} and the behavior of the longitudinal MR suggest a strong coupling between the holes and the Cu spins. We discuss implications of the large dephasing rate, and contrast the MR with that of conventional disordered metals.
OSTI ID:
5280004
Journal Information:
Physical Review Letters; (United States), Journal Name: Physical Review Letters; (United States) Vol. 67:6; ISSN PRLTA; ISSN 0031-9007
Country of Publication:
United States
Language:
English