Dependence of light-induced ESR on nitrogen content in amorphous silicon-nitrogen alloys

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:527696

Zhang, J; Ohtsuka, Toshihiro; Kumeda, Minoru; Shimizu, Tatsuo ^[1]

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1. Kanazawa Univ. (Japan). Faculty of Engineering

The LESR signals are observed for the a-Si{sub 1{minus}x}N{sub x}:H samples over a wide range of nitrogen content at 77K. By decomposing the LESR signals using three components, i.e., the neutral Si dangling bond (D{sup 0}) component, the broad component with a linewidth of 16 G, and the narrow component with a linewidth of 5 G, the authors find that the three components are observed only in the Si-rich samples. The density of light-induced D{sup 0} increases with x, whereas the densities of both the narrow and the broad components increase in the range of x {le} 0.32 and are almost independent of x for larger x. The g-value of the broad components falls down sharply from 2.01 to 2.006 with an increase in x, while the g-value of the narrow component is unchanged and it is around 2.004. All of the three components can be annihilated by sub-gap illumination. The origins of the broad and the narrow components are discussed.

• OSTI ID: 527696
• Report Number(s): CONF-960401--; ISBN 1-55899-323-1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL COMPOSITION
ELECTRON SPIN RESONANCE
EXPERIMENTAL DATA
ILLUMINANCE
MICROSTRUCTURE
POINT DEFECTS
SILICON NITRIDES
TEMPERATURE DEPENDENCE