Dependence of light-induced ESR on nitrogen content in amorphous silicon-nitrogen alloys
- Kanazawa Univ. (Japan). Faculty of Engineering
The LESR signals are observed for the a-Si{sub 1{minus}x}N{sub x}:H samples over a wide range of nitrogen content at 77K. By decomposing the LESR signals using three components, i.e., the neutral Si dangling bond (D{sup 0}) component, the broad component with a linewidth of 16 G, and the narrow component with a linewidth of 5 G, the authors find that the three components are observed only in the Si-rich samples. The density of light-induced D{sup 0} increases with x, whereas the densities of both the narrow and the broad components increase in the range of x {le} 0.32 and are almost independent of x for larger x. The g-value of the broad components falls down sharply from 2.01 to 2.006 with an increase in x, while the g-value of the narrow component is unchanged and it is around 2.004. All of the three components can be annihilated by sub-gap illumination. The origins of the broad and the narrow components are discussed.
- OSTI ID:
- 527696
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
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