Defect characterization of high-rate deposited hydrogenated amorphous silicon films
Book
·
OSTI ID:527693
- City Univ. of Hong Kong (Hong Kong). Dept. of Electronic Engineering
- Shantou Univ., Guangdong (China). Dept. of Physics
- National Univ. of Singapore (Singapore). Dept. of Electrical Engineering
High rate deposition of a-Si:H films has become one of the key techniques for low-cost, large-scale production of thin film devices. Hydrogenated amorphous silicon films were fabricated with a thermocatalytic PCVD method of which the deposition rate was up to 1.5 nm/sec. The Heterojunction Monitored Capacitance method was employed to determine the midgap-state densities in the undoped semiconductor film from high frequency C-V characteristics. Experimental results showed that the thermocatalytic PCVD method is an effective way to produce high-rate deposited a-Si:H films.
- OSTI ID:
- 527693
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
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