Phase separation by rapid thermal annealing in Si-sub-oxides and -nitrides formed by plasma CVD
- North Carolina State Univ., Raleigh, NC (United States)
Hydrogenated silicon suboxide and subnitride films were deposited by a remote plasma enhanced chemical-vapor deposition (RPECVD) process. Rapid thermal annealing (RTA) of these alloys eliminated all of the bonded hydrogen and formed a two phase system. The microstructure of the annealed films showed silicon crystallites (c-Si) surrounded by amorphous layers. The amorphous layers were identified as SiO{sub 2} and Si{sub 3}N{sub 4} in the annealed suboxides and subnitrides, respectively. The as-deposited films showed band edge photoluminescence (PL); however, no PL was observed from the annealed films. This indicates that there was no significant suboxide or subnitride bonding in the amorphous layers at the metallurgically-sharp c-Si-SiO{sub 2} and c-Si-Si{sub 3}N{sub 4} interfaces, respectively.
- OSTI ID:
- 527664
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
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