Analytical model of a-Si/c-Si HIT solar cell
- Univ. of Ljubljana (Slovenia). Faculty of Electrical Engineering
Using suitable simplifying approximations inside the particular regions of a p-i a-Si/n c-Si heterojunction solar cell, the analytical expressions for the solar cell current-voltage characteristics are derived showing clearly the dominating first-order effects on solar cell performance. The derived closed form solutions indicate that in the useful forward voltage range the largest dark current component of this cell is the interface recombination current and that the main contribution to the photocurrent comes from the light generated holes in the c-Si substrate layer. The transfer of holes across the intrinsic layer and over the {Delta}E{sub {nu}} barrier is strongly suppressed resulting in an attenuation of solar cell dark and photocurrent.
- OSTI ID:
- 527639
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
Similar Records
An analytical model for analyzing the current-voltage characteristics of bulk heterojunction organic solar cells
Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell