Method of forming a resist mask resistant to plasma etching
Patent
·
OSTI ID:5272811
A mask which is resistant to a plasma etching treatment is formed by lithographically patterning a radiation sensitive film present on a substrate. The etch resistance of the mask is enhanced by exposure to a carbon monoxide plasma which forms a region with an enhanced etch resistance over the surface of the patterned film. This method may be used, for example, to manufacture a photomask using a chromium coated glass substrate, or during the manufacture of semiconductor devices on a semiconductor wafer substrate.
- Assignee:
- US Philips Corp.
- Patent Number(s):
- US 4504574
- OSTI ID:
- 5272811
- Country of Publication:
- United States
- Language:
- English
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