Slow electrons impinging on dielectric solids. I. Basic aspects
Journal Article
·
· Physical Review, B: Condensed Matter
- INFM and Centro Materiali e Biofisica Medica, Istituto Trentino di Cultura, I-38050 Povo, Trento (Italy)
- INFM and Dipartimento di Fisica dellUniversita di Trento, I-38050 Povo, Trento (Italy)
The basic aspects related to the scattering processes, useful for both the analytical and Monte Carlo calculation of backscattering and the depth distribution of low-energy ({ital E}{sub 0}{le}10 keV) electrons impinging on solid targets, are described. After a careful analysis of the scattering mechanisms, selected new results regarding elastic and inelastic scattering of low-energy electrons impinging on SiO{sub 2} are reported. Comparison with experimental data and earlier theoretical results show a general good agreement. {copyright} {ital 1997} {ital The American Physical Society}
- OSTI ID:
- 527018
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 4 Vol. 56; ISSN 0163-1829; ISSN PRBMDO
- Country of Publication:
- United States
- Language:
- English
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