Introduction to radiation-resistant semiconductor devices and circuits
- Ernest Orlando Lawrence Berkeley National Laboratory, Physics Division, I Cyclotron Road, Berkeley, California 94720 (United States of America)
This tutorial paper provides an overview of design considerations for semiconductor radiation detectors and electronics in high-radiation environments. Problems specific to particle accelerator applications are emphasized and many of the presented results originated in extensive studies of radiation effects in large-scale particle detectors for the SSC and LHC. Basic radiation damage mechanisms in semiconductor devices are described and specifically linked to electronic parameter changes in detectors, transistors, and integrated circuits. Mitigation techniques are discussed and examples presented to illustrate how the choice of system architecture, circuit topology, and device technology, can extend the range of operation to practcle fluences {gt}10{sup 14}cm{sup {minus}2} and ionizing doses {gt}100Mrad. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 526791
- Report Number(s):
- CONF-9605173--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 390; ISSN 0094-243X; ISSN APCPCS
- Country of Publication:
- United States
- Language:
- English
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