Excess carrier lifetime of 3C{endash}SiC measured by the microwave photoconductivity decay method
- Center for Cooperative Research, Nagoya Institute of Technology, Gokiso, Nagoya 466 (Japan)
- Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Nagoya 466 (Japan)
Excess carrier lifetime of 3C{endash}SiC grown on a Si substrate by chemical vapor deposition is measured at room temperature by the noncontact microwave photoconductivity decay method. A N{sub 2} laser is used to excite carriers in the SiC layer. The measured decay curves of the excess carrier concentration have fast ({tau}{approx}3 {mu}s) and slow ({tau}{gt}200 {mu}s) components. The origin of the slow decay is discussed on the basis of the numerical simulation of the recombination process, and the presence of traps with a very small electron capture cross section ({lt}1{times}10{sup {minus}21}cm{sup 2}) is predicted. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 526489
- Journal Information:
- Applied Physics Letters, Vol. 70, Issue 13; Other Information: PBD: Mar 1997
- Country of Publication:
- United States
- Language:
- English
Similar Records
The lifetime distribution of excess carriers in H{sup +} ion implanted silicon by photoconductive frequency resolved spectroscopy
Microwave separation measurements of bulk lifetime and surface recombination velocities in Si wafers with various surface properties
Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation
Conference
·
Tue Dec 31 00:00:00 EST 1996
·
OSTI ID:526489
Microwave separation measurements of bulk lifetime and surface recombination velocities in Si wafers with various surface properties
Book
·
Tue Dec 31 00:00:00 EST 1996
·
OSTI ID:526489
+2 more
Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation
Journal Article
·
Mon May 14 00:00:00 EDT 2007
· Applied Physics Letters
·
OSTI ID:526489