Ballistic electron emission microscopy studies of the NiSi sub 2 /Si(111) interface

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:5263133

Fernandez, A; Hallen, H D; Huang, T; Buhrman, R A; Silcox, J ^[1]

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1. Cornell Univ., Ithaca, NY (United States)

In this study the authors have performed ballistic electron emission microscopy measurements on the NiSi{sub 2}/Si(111) system under UHV conditions. Schottky barrier heights have been measured for types A and B interfaces and are found to be in agreement with other techniques. Through correlations between structural defects in the silicide and local increases in collector currents, we find that elastic scattering in the film can increase ballistic electron transmission rates across the interface.

• OSTI ID: 5263133
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:2; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INTERFACES
ELECTRICAL PROPERTIES
NICKEL SILICIDES
SILICON
DEFECTS
ELECTRIC CURRENTS
ELECTRON MICROSCOPY
SCHOTTKY EFFECT
ULTRAHIGH VACUUM
CURRENTS
ELEMENTS
MICROSCOPY
NICKEL COMPOUNDS
PHYSICAL PROPERTIES
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360606* - Other Materials- Physical Properties- (1992-)