Ultrafast time resolutions in scanned probe microscopies: Surface photovoltage on Si(111) minus (7 times 7)

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1063/1.103997· OSTI ID:5262773

Hamers, R J ^[1]; Cahill, D G ^[2]

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1. Univ. of Wisconsin, Madison (United States)
2. IBM, T. J. Watson Research Center, Yorktown Heights, NY (United States)

The speed limitations conventionally encountered in scanning tunneling microscopy, scanning capacitance microscopy, and atomic force microscopy result from the external electronics and are not inherent to the techniques themselves. Ultrafast time resolution can be achieved through the use of correlation methods. The authors demonstrate the application of time-resolved optical correlation techniques to scanned probe microscopy by probing the relaxation of photo-excited carriers at the Si(111){minus}(7{times}7) surface on the nanosecond and picosecond time scales using scanning tunneling and scanning capacitance microscopy measurements of the surface photovoltage. The observed temporal response demonstrates that the voltage arises from photovoltaic effects and does not arise from direct optical rectification in the tunnel junction gap.

• OSTI ID: 5262773
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:2; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
47 OTHER INSTRUMENTATION
MICROSCOPES
TIME RESOLUTION
SILICON
PHOTOVOLTAIC EFFECT
MICROSCOPY
RECTIFIERS
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
PHOTOELECTROMAGNETIC EFFECTS
RESOLUTION
SEMIMETALS
TIMING PROPERTIES
360606* - Other Materials- Physical Properties- (1992-)
440800 - Miscellaneous Instrumentation- (1990-)