Charge-state distributions of scattered and recoil ions in C[sup +]--, F[sup +]--, and Ne[sup +]--Si-surface collisions

Journal Article · Mon Jan 31 23:00:00 EST 1994 · Physical Review A; (United States)

DOI:https://doi.org/10.1103/PhysRevA.49.1107· OSTI ID:5257236

Hird, B; Armstrong, R A; Gauthier, P ^[1]

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1. Ottawa-Carleton Institute for Physics, Ottawa University Campus, Ottawa, Ontario, KIN6N5 (Canada)

The proportions of keV ions, incident on a clean silicon surface, which are scattered as doubly or triply charged ions are found to increase with atomic number from C[sup +] to Ne[sup +]. In contrast, the recoil Si[sup 2+] and Si[sup 3+] ion yields decrease. A definite collision-energy threshold for the production of each of these multicharged ions is found. All the multicharged recoil silicon ion thresholds are consistent with inner-shell vacancy production at the 3[ital d][sigma]-3[ital p][pi] level crossing. However, the multicharged scattered ions seem to be produced by a different process. The surface-scattered ion yields may follow the same systematics as x-ray yields, which pass through maxima when the shell energies match.

• OSTI ID: 5257236
• Journal Information: Physical Review A; (United States), Journal Name: Physical Review A; (United States) Vol. 49:2; ISSN 1050-2947; ISSN PLRAAN
• Country of Publication: United States
• Language: English

Related Subjects

665300* -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARBON IONS
CHARGE STATES
CHARGED PARTICLES
COLLISIONS
DISTRIBUTION
ELEMENTS
ENERGY RANGE
FLUORINE IONS
ION COLLISIONS
IONS
KEV RANGE
NEON IONS
RECOILS
SCATTERING
SEMIMETALS
SILICON
SURFACES