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Photoluminescence spectra of some ternary and quaternary chalcopyrite semiconductors

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.575352· OSTI ID:5253511
Photoluminescence (PL) emission spectra of single crystals and thin films of CuGa/sub x/In/sub 1/..sqrt../sub x/Se/sub 2/ compounds have been investigated at various measuring temperatures, and compared with the emission from CuGaSe/sub 2/ and CuInSe/sub 2/. The observed PL spectra consisted of two groups of emission lines: the near-band-gap group (A) and the lower energy group (B). It was found that the type of emission obtained is determined by the amount of stoichiometry and molecularity deviations. The PL data also showed a correspondence between the defect related transitions from the CuGa/sub x/In/sub 1/..sqrt../sub x/Se/sub 2/ solid solution and CuGaSe/sub 2/ for x<0.5. Based on the intrinsic defect states in the two components CuInSe/sub 2/ and CuGaSe/sub 2/, the predominant defect states transitions in the solid solution are defined for the m<1 and ..delta..S>0. Interpretation of the PL spectra of Se-deficient compounds with m>1 are rather complicated, and much work remains to be done before the defect chemistry of CuGa/sub x/In/sub 1/..sqrt../sub x/Se/sub 2/ could be fully understood.
Research Organization:
Solar Energy Research Institute, Golden, Colorado 80401
OSTI ID:
5253511
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 6:3; ISSN JVTAD
Country of Publication:
United States
Language:
English