Diffusion length determination in p-n junction diodes and solar cells

Journal Article · Fri Aug 01 00:00:00 EDT 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91891· OSTI ID:5250493

Arora, N D; Chamberlain, S G; Roulston, D J

An experimental technique for determining the minority carrier diffusion length in the base region of Si p-n junction diodes and solar cells is described. The procedure is to operate the device in the photoconductive mode and to measure its photoresponse in the wavelength region near the energy gap. The ratio of incident light intensity to photocurrent is a linear function of reciprocal absorption coefficient for each wavelength; the slope of the set of points directly yields the diffusion length. In addition, a nonlinear least-squares analysis is also used to determine the diffusion length.

• Research Organization: Department of Electrical Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1
• OSTI ID: 5250493
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 37:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ABSORPTIVITY
CHARGE CARRIERS
DATA
DIFFUSION LENGTH
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY GAP
EQUIPMENT
INFORMATION
JUNCTIONS
LEAST SQUARE FIT
MAXIMUM-LIKELIHOOD FIT
NUMERICAL SOLUTION
OPTICAL PROPERTIES
P-N JUNCTIONS
PHOTOCONDUCTIVITY
PHOTOELECTRIC CELLS
PHOTOSENSITIVITY
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SENSITIVITY
SILICON
SOLAR CELLS
SOLAR EQUIPMENT
WAVELENGTHS