Field effect in an n-GaAs metal-anodic oxide-film injunction

Journal Article · Wed Oct 01 00:00:00 EDT 1986 · Sov. Phys. J. (Engl. Transl.); (United States)

OSTI ID:5250356

Tikhov, S V; Karpovich, I A; Martynov, V V; Funina, G V

In this paper the authors present results attained in parallel investigations of mobility ..mu../sub F/ in the field effect, capacitance C, and the active conductance component G for a wide range of frequencies and controlling voltages, as well as of the capacitor saturation photoelectron-motive force phi/sub sat/(V) in an n-GaAs metal-AO-epitaxial film structure. A new combined method is offered for the determination of separation-boundary parameters, based on an analysis of the relationships between ..mu../sub F/, C, and G and the controlling voltage and the test frequency

• Research Organization: Lobachevskii State Univ., Gorkii (USSR)
• OSTI ID: 5250356
• Journal Information: Sov. Phys. J. (Engl. Transl.); (United States), Vol. 29:4; Other Information: Translated from Izv. Vyssh. Uchebn. Zaved., Fiz.; 29: No. 4, 61-66(Apr 1986)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
PHOTOCONDUCTIVITY
PHOTOVOLTAIC EFFECT
ALUMINIUM OXIDES
GALLIUM ARSENIDES
SEMICONDUCTOR JUNCTIONS
MATERIALS TESTING
CAPACITANCE
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTROMOTIVE FORCE
ELECTRON DENSITY
ELECTRON MOBILITY
N-TYPE CONDUCTORS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
GALLIUM COMPOUNDS
JUNCTIONS
MATERIALS
METALS
MOBILITY
OXIDES
OXYGEN COMPOUNDS
PARTICLE MOBILITY
PHOTOELECTROMAGNETIC EFFECTS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR MATERIALS
TESTING
360603* - Materials- Properties
360204 - Ceramics
Cermets
& Refractories- Physical Properties
360104 - Metals & Alloys- Physical Properties