Gain measurements on semiconductor lasers by optical feedback from an external grating cavity

Journal Article · Mon Aug 01 00:00:00 EDT 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1072027· OSTI ID:5249895

Gade, N; Osmundsen, J H

The authors report on new methods to determine the curvature around maximum of the mode gain curve of homogeneously line-broadened semiconductor lasers, either by measuring the wavelength dependence of threshold current of the laser coupled to an external grating cavity or by measuring the tuning range of the laser versus the amount of optical feedback. They experimentally found the mode gain width and the current-induced peak-gain wavelength shift of a GaAlAs CSP laser to 175 A and 2.1 A/ mA, respectively.

• Research Organization: Electromagnetics Inst., Tech. Univ. of Denmark, Lyngby
• OSTI ID: 5249895
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. QE-19:8
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
GAIN
ALUMINIUM ARSENIDES
FEEDBACK
GALLIUM ARSENIDES
GRATINGS
LINE BROADENING
OPTICAL PROPERTIES
THRESHOLD CURRENT
WAVELENGTHS
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
LASERS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)