Low-threshold semiconductor Raman laser

Journal Article · Mon Aug 01 04:00:00 EDT 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1072030· OSTI ID:5249892

Suto, K; Nishizawa, J

A semiconductor Raman laser using the longitudinal optical (LO) phonon mode of GaP has a very low threshold compared to the transverse optical (TO) phonon mode of GaP and even compared to simulated Raman scatterings in various kinds of liquids and insulating solid materials. The lowest threshold value of the pulsed input optical power is 8 kW (5 x 10/sup 6/ W/cm/sup 2/) at room temperature. Far infrared radiation (24.8 ..mu..m) has been generated by placing both GaP with the LO phonon mode and GaAs with the TO phonon mode in a Fabry-Perot resonator. The maximum far infrared power has been 3 W.

• Research Organization: Research Inst. of Electrical Communication, Tohoku Univ., Sendai
• OSTI ID: 5249892
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-19:8; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
ELECTROMAGNETIC RADIATION
FABRY-PEROT INTERFEROMETER
FAR INFRARED RADIATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INFRARED RADIATION
INTERFEROMETERS
LASERS
MEASURING INSTRUMENTS
PHONONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUASI PARTICLES
RADIATIONS
RAMAN SPECTRA
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRA