A monolithic reduced-size Ku-band SPDT (single-pole double-throw) FET switch

Conference · Fri Jan 01 00:00:00 EST 1988

OSTI ID:5247769

Bryant, D T

A GaAs ku-band monolithic single-pole double-throw (SPDT) FET switch has been designed and demonstrated. Small-signal insertion loss is less than 1.4 dB over a 14 GHz to 18 GHz band with a VSWR less than 1.5:1. The common terminal to off-channel isolation exceeds 18 dB. The switching is achieved with a -4.5 volt signal on the gate of the on-channel FET with the other gate at 0 volts. The switching current requirement is only the reverse bias gate leakage current (typically 3 uA). Large-signal performance is similar with a -10 volt control signal. The small chip size, 1.3 mm x 1.3 mm x 0.15 mm, permits more than 2300 monolithic switches to be fabricated on a single 3-inch GaAs wafer. 9 figs.

• Research Organization: Texas Instruments, Inc., Dallas (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5247769
• Report Number(s): SAND-87-7172C; CONF-880565-2; ON: DE88006273
• Resource Relation: Conference: IEEE MTT-S international microwave symposium, New York, NY, USA, 25 May 1988
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
FIELD EFFECT TRANSISTORS
DESIGN
TRANSISTOR SWITCHING CIRCUITS
FREQUENCY DEPENDENCE
GALLIUM ARSENIDES
PERFORMANCE
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC CIRCUITS
GALLIUM COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SWITCHING CIRCUITS
TRANSISTORS
420800* - Engineering- Electronic Circuits & Devices- (-1989)