Properties of AlGaAsSb--GaSb heterojunction injection lasers in the 1. 4--1. 8. mu. wavelength range

Journal Article · Mon Dec 31 23:00:00 EST 1979 · Sov. J. Quant. Electron. (Engl. Transl.); (United States)

DOI:https://doi.org/10.1070/QE1980v010n01ABEH009853· OSTI ID:5240831

Aarik, Y A; Dolginov, L M; Drakin, A E; Druzhinina, L V; Eliseev, P G; Lyuk, P A; Sverdlov, B N; Skripkin, V A; Friedentkhal', Y F

The characteristics of heterostructures and the main radiative properties of infrared (1.4--1.8 ..mu..) heterojunction lasers using quaternary solid solutions of AlGaAsSb, grown by liquid--phase epitaxy of GaSb substrates, are presented. A threshold current density of 2--4 kA/cm/sup 2/ was obtained in heterojunction injection lasers at 300 /sup 0/K and estimates were made of the waveguide effect and the optimal thickness of the active layer. It was found that the relative discontinuity of the refractive index at the interfaces of the active layer was approximately 5% for a 25% reduction in the Al concentration from the wide- to narrow-gap layers of the heterostructure. Continuous-wave laser action at 77 /sup 0/K was obtained in the 1.40--1.57 ..mu.. wavelength range.

• Research Organization: P. N. Lebedev Physics Institute, Academy of Sciences of the USSR, Moscow
• OSTI ID: 5240831
• Journal Information: Sov. J. Quant. Electron. (Engl. Transl.); (United States), Journal Name: Sov. J. Quant. Electron. (Engl. Transl.); (United States) Vol. 10:1; ISSN SJQEA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ELECTROMAGNETIC RADIATION
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
INFRARED RADIATION
JUNCTIONS
LASERS
P-N JUNCTIONS
PERFORMANCE
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
WAVEGUIDES