Method of fabricating integrated circuit structure having CMOS and bipolar devices

Patent · Tue Aug 12 04:00:00 EDT 1986

OSTI ID:5237979

Bonn, M A

An improved method is described for isolating active devices in an integrated circuit structure containing both CMOS and bipolar devices to simultaneously form channel stops to separate CMOS channels from adjacent CMOS channels and isolation regions to separate bipolar devices from adjoining CMOS devices as well as to separate adjacent bipolar devices from one another comprises: implanting, into a substrate having field oxide portions previously grown thereon, impurities capable of forming one or more channel stops and isolation regions at an energy level sufficiently high to permit penetration of the impurities through unmasked portions of the field oxide.

• Assignee: Advanced Micro Devices, Inc., Sunnyvale, CA
• Patent Number(s): US 4604790
• OSTI ID: 5237979
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHALCOGENIDES
ELECTRONIC CIRCUITS
FABRICATION
IMPURITIES
INTEGRATED CIRCUITS
ION IMPLANTATION
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
SEMICONDUCTOR DEVICES
SUBSTRATES
TRANSISTORS