Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Photoelectrochemical behavior of gallium arsenide and the possibility of protecting it from photocorrosion by a titanium dioxide film

Journal Article · · Sov. Electrochem. (Engl. Transl.); (United States)
OSTI ID:5237090
Corrosion-resistant anodic semiconductors sensitive to the visible part of the spectrum are very important for the photoelectrochemical decomposition of water to convert solar energy. One of the methods of solving the problem is to devise a composite consisting of a relatively narrow bandgap semiconductor and a protective coating consisting of a corrosion-resistant wide-bandgap semiconductor such as TiO/sub 2/. This paper reports further studies on the possibility of using the composites for the photoelectrochemical decomposition of water by a GaAs-TiO/sub 2/ system. The authors used n-type GaAs single crystals. Since the TiO/sub 2/ film is formed directly on the GaAs surface by heat treatment, it was first necessary for the authors to study the effect of the treatment conditions on the electrochemical behavior of GaAs. The work shows that a TiO/sub 2/ film on GaAs caused the latter to photocorrode by sensitivity to visible light throughout the exposure. The preparation of high-quality pore-free films for this purpose is of considerable importance and, according to the authors, requires further study.
Research Organization:
Institute of Inorganic and Physical Chemistry, Academy of Sciences of the AzerSSR, Baku
OSTI ID:
5237090
Journal Information:
Sov. Electrochem. (Engl. Transl.); (United States), Journal Name: Sov. Electrochem. (Engl. Transl.); (United States) Vol. 21:3; ISSN SOECA
Country of Publication:
United States
Language:
English

Similar Records

Photoelectrochemical evolution of elemental fluorine at TiO/sub 2/ electrodes in anhydrous hydrogen fluoride solutions
Journal Article · Wed May 25 00:00:00 EDT 1988 · J. Am. Chem. Soc.; (United States) · OSTI ID:6974447

Photoelectrolysis of water with semiconductor materials
Journal Article · Thu Sep 01 00:00:00 EDT 1977 · J. Electrochem. Soc.; (United States) · OSTI ID:6791781

Graphene oxide modified TiO2 nanotube arrays: enhanced visible light photoelectrochemical properties
Journal Article · Sat Dec 31 23:00:00 EST 2011 · Nanoscale · OSTI ID:1036410