Opto-electronic integrated-circuit technology and design. Annual report, July 1988-July 1989
This is the second annual report from a research program aimed at exploring technology for opto-electronic integration. The primary goal is to develop technologies critical to the evolution of opto-electronic integrated circuits. Results from new dry etching techniques such as radical beam ion beam etching and laser activated etching are reviewed, as well as progress on a UHV processing chamber being constructed for use with the MBE systems. Process development on vertical-cavity surface-emitting lasers and modulators is presented, with emphasis on the periodic-gain nipi-pumping laser structure. Current results on surface-emitting lasers are presented, covering vertical high-Q cavity structures with InGaAs strained-layer quantum wells as well as 45 etched facet structures. Finally, recent work on quantum-well absorption-edge modification using impurity-free disordering techniques is reviewed.
- Research Organization:
- California Univ., Santa Barbara, CA (USA). Dept. of Electrical and Computer Engineering
- OSTI ID:
- 5234026
- Report Number(s):
- AD-A-212380/0/XAB; CU-ECE-TR-89-08
- Country of Publication:
- United States
- Language:
- English
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