Near-infrared high-gain strained layer InGaAs heterojunction phototransistors: Resonant periodic absorption
- Sandia National Laboratories, Albuquerque, New Mexico (USA)
- Solid State Electronics Laboratory, Stanford University, Stanford, California (USA)
We report high-gain phototransistors on GaAs substrates at wavelengths for which GaAs substrates are transparent, and hence, are promising for optoelectronic interconnect, optical-logic device, neural network, and lightwave communication applications. Using a new technique called resonant periodic absorption we have achieved high-optical gain at previously inaccessible wavelengths ({gt}925 nm). Resonant periodic absorption is achieved in an asymmetric microresonator consisting of a strained-layer InGaAs/GaAs heterojunction phototransistor sandwiched between distributed Bragg reflectors. By aligning the optical intensity maxima with the InGaAs quantum wells in the collector region of the phototransistor, we dramatically enhance the optical absorption.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5232667
- Journal Information:
- Applied Physics Letters; (United States), Vol. 59:13; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
PHOTOTRANSISTORS
GAIN
OPERATION
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
NEAR INFRARED RADIATION
PERFORMANCE
RESONANCE ABSORPTION
ABSORPTION
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFRARED RADIATION
JUNCTIONS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
TRANSISTORS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)
360603 - Materials- Properties