High-frequency electron-scattering rate and Drude Zener theory in compound semiconductors

Conference · Tue Jan 01 04:00:00 EST 1980

OSTI ID:5228951

Jensen, B

The response of free carriers in a polar semiconductor to a high frequency electric field is examined. A frequency dependent relaxation time has been derived for free carriers in polar semiconducting compounds with the band structure of the Kane theory from a quantum extension of the Boltzmann transport equation. The expression obtained reduces to the usual quasiclassical Boltzmann result in the limit of low frequencies, elastic scattering mechanisms, and parabolic bands, and gives the quantum result at high frequencies when used in the Drude Zener formula for the optical conductivity. A high frequency extension of the Drude theory is thus obtained which gives the observed lambda/sup 3/ dependence of the absorption coefficient characteristic of polar scattering in III-V and II-VI compounds in the near infrared, and reduces to the usual lambda/sup 2/ dependence at sufficiently low frequencies. At high intensities the scattering rate becomes a function of field intensity.

• Research Organization: Boston Univ., MA (USA). Dept. of Physics
• DOE Contract Number: AC02-79ER10444
• OSTI ID: 5228951
• Report Number(s): CONF-8009119-4; ON: DE82016977
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
ELECTRON MOBILITY
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
MATERIALS
MOBILITY
PARTICLE MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR MATERIALS
TRANSPORT THEORY