Application of MeV ion implantation in the formation of nano-metallic clusters in silica
- Alabama A and M Univ., Normal, AL (United States). Center for Irradiation of Materials
- National Aeronautics and Space Administration, Marshal Space Flight Center, AL (United States)
- Oak Ridge National Lab., TN (United States). Solid State Div.
The implantation of metal ions into photorefractive materials followed by thermal annealing leads to an increase in resonance optical absorption as well as an enhancement of the nonlinear optical properties. The authors have implanted ions of Au (3.6 MeV), Ag (1.5 MeV) and Cu (2.0 MeV) into pure silica followed by careful heat treatment. Using optical absorption spectrophotometry and Rutherford backscattering spectrometry the authors have measured the cluster size for each heat treatment temperature and determined the activation energies for their formation. The third order electric susceptibility for silica with 2 nm gold clusters has been determined by Z-scan to be 6.5 {times} 10{sup {minus}8} esu.
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- OSTI ID:
- 522299
- Report Number(s):
- CONF-961202--; ISBN 1-55899-361-4
- Country of Publication:
- United States
- Language:
- English
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