The C sup 3. Pi. -- X sup 3. Pi. band system of the SiC radical

Journal Article · Sun Sep 15 04:00:00 EDT 1991 · Journal of Chemical Physics; (United States)

DOI:https://doi.org/10.1063/1.460800· OSTI ID:5222000

Butenhoff, T J; Rohlfing, E A ^[1]

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1. Combustion Research Facility, Sandia National Laboratories, Livermore, California (USA)

We report a study of the {ital C} {sup 3}{Pi}--{ital X} {sup 3}{Pi} band system of the SiC radical. Jet-cooled SiC is produced by a laser vaporization/pulsed beam source and is probed by pulsed laser-induced fluorescence excitation spectroscopy. Vibrational term energies and rotational constants are determined for {ital v}{prime}=0--8 of the {ital C} state and for {ital v}{double prime}=0--5 of the {ital X} state. The spectroscopic constants for the {ital C} state are {ital T}{sub {ital e}}=22 830.4(9) cm{sup {minus}1}, {omega}{sub {ital e}}=615.7(8) cm{sup {minus}1}, and {ital r}{sub {ital e}}=1.919(3) A; for the {ital X} state, {omega}{sub {ital e}}=965.16(24) cm{sup {minus}1} and {ital r}{sub {ital e}}=1.7182(2) A.

• OSTI ID: 5222000
• Journal Information: Journal of Chemical Physics; (United States), Journal Name: Journal of Chemical Physics; (United States) Vol. 95:6; ISSN JCPSA; ISSN 0021-9606
• Country of Publication: United States
• Language: English

Related Subjects

640302* -- Atomic
Molecular & Chemical Physics-- Atomic & Molecular Properties & Theory
74 ATOMIC AND MOLECULAR PHYSICS
CARBIDES
CARBON COMPOUNDS
ENERGY LEVELS
EXCITED STATES
FLUORESCENCE
GROUND STATES
LASER SPECTROSCOPY
LUMINESCENCE
RADICALS
ROTATIONAL STATES
SILICON CARBIDES
SILICON COMPOUNDS
SPECTROSCOPY
VIBRATIONAL STATES