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High concentration of deuterium in palladium from plasma ion implantation

Journal Article · · Physics of Fluids B; (United States)
DOI:https://doi.org/10.1063/1.859799· OSTI ID:5217100
;  [1]
  1. Naval Surface Warfare Center, White Oak, Silver Spring, Maryland (USA)

Based on a theoretical calculation, a new scheme to increase deuterium density in palladium over its initial value is presented. This deuterium enrichment scheme makes use of plasma ion implantation. A cylindrical palladium rod (target) preloaded with deuterium atoms, coated with a diffusion-barrier material, is immersed in a deuterium plasma. The palladium rod is connected to a high-power modulator which provides a series of negative-voltage pulses. During these negative pulses, deuterium ions fall into the target, penetrate the diffusion barrier, and are implanted inside the palladium. For reasonable system parameters allowed by present technology, it is found from theoretical calculations that the saturation deuterium density after prolonged ion implantation can be several times the palladium atomic number density. Assuming an initial deuterium density, {ital n}{sub 0}=4{times}10{sup 22} cm{sup {minus}3}, it is also found that the deuterium density in palladium can triple its original value within a few days of the ion implantation for a reasonable target size. Because of the small diffusion coefficient in palladium, the incoming ions do not diffuse quickly inward, thereby accumulating near the target surface at the beginning of the implantation.

OSTI ID:
5217100
Journal Information:
Physics of Fluids B; (United States), Journal Name: Physics of Fluids B; (United States) Vol. 3:11; ISSN 0899-8221; ISSN PFBPE
Country of Publication:
United States
Language:
English