Computer modeling of electronic properties in thin-film silicon hydrogen-alloy and its application to solar cells
A self-consistent numerical model for hydrogenated amorphous silicon (a-Si:H) has been developed to aid in the understanding of the details of the electronic behavior of silicon-hydrogen alloy material and the characteristic features of devices made from it. A gap state model incorporating exponential tail states and Gaussian-distributed dangling bond states and doping states based on the experimental results and theoretical background is proposed. Detailed transport equations including charge trapping and recombination processes are formulated, and solved numerically in one-dimension. The detailed model calculations are compared with published experimental results for the dependence of dark conductivity on doping and temperature, and dependence of sweep-out charge on doping. It is also used to evaluate a one-to-one relationship between four-fold coordinated doping atoms and dangling bonds, as well as the dangling bond energy levels and distribution. The dependence of the photoconductivity on light-intensity, temperature, and spin density was investigated to understand the recombination processes and transport mechanism in a-Si:H material. A self-consistent numerical model for thin film silicon-hydrogen alloy materials and devices was developed which includes the one-to-one relationship between doping and dangling bonds.
- Research Organization:
- Purdue Univ., Lafayette, IN (USA)
- OSTI ID:
- 5206690
- Resource Relation:
- Other Information: Thesis (Ph. D.)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SILICON
PHYSICAL PROPERTIES
SILICON SOLAR CELLS
DESIGN
COMPUTERIZED SIMULATION
MATERIALS
MATHEMATICAL MODELS
THIN FILMS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
FILMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SIMULATION
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion