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Electronic properties of. alpha. -quartz under pressure

Journal Article · · Physical Review, B: Condensed Matter; (United States)
; ; ;  [1]
  1. Minnesota Univ., Minneapolis, MN (United States). Dept. of Chemical Engineering and Materials Science Minnesota Univ., Minneapolis, MN (United States). Supercomputer Inst.
The electronic structure of {alpha}-quartz is investigated within the local-density formalism using recently developed {ital soft} pseudopotentials. We present results for the band structure, density of states, and charge density of {alpha}-quartz at ambient pressure and near the crystalline-to-amorphous transition. The results at ambient pressure compare well with experiment, and are generally consistent with earlier theoretical analysis. Pressure is found to induce a strong interaction between the Si-O bonding and O 2{ital p} lone-pair valence states. The gap between the corresponding bands vanishes in the region of the transition to the glass phase. The fundamental band gap increases, instead, with increasing pressure. Trends in the pressure dependence of the electronic structure are discussed in connection with the distortion of the oxygen sublattice towards an ideal close-packed configuration.
DOE Contract Number:
FG02-89ER45391
OSTI ID:
5203694
Journal Information:
Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 44:10; ISSN PRBMD; ISSN 0163-1829
Country of Publication:
United States
Language:
English